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IRF5210STRLPBF
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Specifications
| Continuous Drain Current (Id) @ Vgs = -10V | 250A |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 1000V |
| Forward Transconductance (gfs) | 9.5S |
| Gate Threshold Voltage (VGS(th)) | -2.0V |
| Gate-to-Source Voltage (Vgs) | ±20V |
| Operating Junction Temperature Range | -55°C to +150°C |
| Package Material | Plastic |
| Package Type | TO-263 |
| Rated Voltage | 1000V |
| Static Drain-to-Source On-Resistance (Rds(on)) | 60mΩ |
| Switching Speed | 14ns (Turn-On Delay Time), 72ns (Turn-Off Delay Time), 63ns (Rise Time), 55ns (Fall Time) |
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Shenzhen Lebai Electronics Co., Ltd.
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