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Specifications
| Drain Current (Id) | 4.0A |
| Drain-Source Voltage (Vds) | 650V |
| Gate-Source Voltage (Vgs) | ±30V |
| On-Resistance (Rds(on)) | 2.2Ω |
| Operating Temperature Range | -55 to +150 ℃ |
| Package Material | Not specified |
| Package Type | TO-252-2 |
| Rated Voltage | 650V |
| Switching Speed | 16ns |
| Threshold Voltage (Vth) | 2.0V |
| Transconductance (gm) | 3.6S |
Datasheet
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Yangcheng Electronic International Co., Ltd.
Shenzhen Jiu Yu Technology Co., Ltd.
Shenzhen Huirunhui Technology Development Co., Ltd.
Shenzhen Guozheng Semiconductor Co., Ltd.
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Suzhou Daryong Dianzi Co., Ltd.
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Jin Xun Technology (Hong Kong) Limited
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Shenzhen Futian District Liye Electronic Trade
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Nanjing Zhongyuan Electronic Technology Co., Ltd.
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Sanqi Corporation
Shenzhen Shenshen Microelectronics Technology Co., Ltd.
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