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HCD65R360

Manufacturer

HUAKE

Model

HCD65R360

Category

semiconductor
transistors

Reference Pricing

1+ :$0.4704
10+ :$0.3962
30+ :$0.3514
100+ :$0.3388
500+ :$0.3304
1000+ :$0.28

Reference Stock

Available:3407

Specifications

Drain Current (Id)11.0A* (Tc=25°C), 6.96A* (Tc=100°C)
Drain-Source Voltage (Vds)650V
Gate-Source Voltage (Vgs)±30V
On-Resistance (Rds(on))340mΩ - 400mΩ (Vgs=10V, Id=5.5A)
Operating Temperature Range0℃ to +150℃
Package MaterialNot specified
Package TypeTO-252
Rated Voltage650V
Switching Speed{"td(on)": "12.3ns", "tr": "35.2ns", "td(off)": "64ns", "tf": "31.3ns"}
Threshold Voltage (Vth)2.0V - 4.0V (Vds=Vgs, ID=250μA)
Transconductance (gm)7.0S (VDs=20V, ID=5.5A)

Datasheet