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00501

Manufacturer

PANJIT

Model

00501

Category

semiconductor
transistors

The 2N7002K_R1_00501 is a compact N-channel MOSFET optimized for low-power switching in 60V systems, offering 300mA continuous current and 500mW dissipation in SOT-23 package. Suitable for signal switching in BMS, DC-DC converters, and motor control, it requires careful thermal management with heat sinks for sustained operation. While cost-effective at bulk volumes, its voltage and current limits restrict use to low-power applications, and gate protection circuitry is recommended to prevent oxide damage.

Reference Pricing

20+ :$0.0182
200+ :$0.0154
600+ :$0.0112
3000+ :$0.0126

Reference Stock

Available:7783

Specifications

Drain Current (Id)300mA
Drain-Source Voltage (Vds)60V
Gate-Source Voltage (Vgs)±20V
On-Resistance (Rds(on))
Operating Temperature Range-55℃ ~ 150℃
Package MaterialHalogen free, compliant with EU RoHS 2.0 standard
Package TypeSOT-23
Rated Voltage60V
Switching Speed2.7ns - 23ns
Threshold Voltage (Vth)1V
Transconductance (gm)100mS

Function And Role

Core Function

N-channel MOSFET for low-power switching applications

Key Characteristics

  • 60V drain-to-source voltage (Vdss)
  • 300mA continuous drain current (Id)
  • 500mW power dissipation (Pd)
  • 1V gate threshold voltage (Vgs(th))
  • SOT-23 package

Application Domains

Basic Scenarios

  • Low-power signal switching in analog circuits
  • DC-DC converter switching stages
  • Battery management system (BMS) low-side switching

Extended Scenarios

  • Motor control in small appliances
  • Power management ICs for IoT devices
  • Solar inverter gate drivers

Precautions

Soldering

Maximum soldering temperature 250°C for 10 seconds

Current Limit

Continuous drain current must not exceed 300mA

Voltage Limit

Operation beyond 60V drain-source voltage risks device failure

Thermal Management

Thermal resistance 35°C/W requires heat sinking for >500mW dissipation

Storage

Store in dry environment below 85% humidity

Risk Warnings
  • Excessive gate voltage (>20V) may damage gate oxide
  • Polarized component; reverse installation causes failure

Alternative Model Params

  • Vdss ≥ 60V
  • Id @ Vgs=4.5V ≥ 250mA
  • Pd @ 25°C ≤ 500mW
  • Ciss ≤ 50pF
  • Qg ≤ 1000pC

Design Recommendations

Layout

Keep gate trace length <2mm to minimize charge injection

Thermal

Use 0402 metal-film resistor (10Ω 1/8W) in thermal path

Compatibility

Matches with LM5060/TPS54331 power regulators

Testing

Verify Vgs(th) ≥ 0.8V with 100mA test current

Market Positioning

Strengths
  • Cost-effective at 0.0084$ per unit (51k order)
  • Space-efficient SOT-23 package
  • RoHS compliance with halogen-free finish
Weaknesses
  • Limited to <500mA applications
  • No built-in protection against overvoltage
  • Thermal performance below 150°C limits high-power use

Datasheet

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