000Z8
Manufacturer
Model
000Z8
Category
The MMBT3906_R1_000Z8 is a cost-effective PNP BJT optimized for low-power switching and amplification in consumer and industrial applications. Its 40V VCEO, 200mA Ic, and -55°C to +150°C operating range make it suitable for automotive and battery systems, while SOT-23 packaging enables compact designs. Engineers should prioritize thermal management and avoid exceeding current/voltage limits to ensure reliability.
Reference Pricing
Reference Stock
Specifications
| Beta (β) | 300 |
| Cut-off Frequency (fT) | 250MHz |
| Input Impedance | Not provided |
| Maximum Collector Current (Ic) | -200mA |
| Maximum Collector Power Dissipation (Pc) | 330mW |
| Maximum Collector Voltage (Vce) | -40V |
| Operating Temperature Range | -55 to 150°C |
| Output Impedance | Not provided |
| Package Material | Not provided |
| Package Type | SOT-23 |
| Power Dissipation | Not provided |
| Rated Voltage | Not provided |
Function And Role
Core Function
PNP bipolar junction transistor (BJT) for low-power switching and signal amplification
Key Characteristics
- 40V collector-emitter voltage (VCEO)
- 330mW power dissipation (Pd)
- 200mA collector current (Ic)
- 100@10mA DC current gain (hFE)
- 250MHz transition frequency (fT)
- 400mV VCE saturation voltage
Application Domains
Basic Scenarios
- Low-power signal switching in consumer electronics
- General-purpose amplification in analog circuits
Extended Scenarios
- Automotive control systems (complementary to NPN BJTs)
- Industrial automation for temperature-sensitive environments
- Battery management systems requiring wide operating temperature ranges
Precautions
| Soldering | Use fine pitch soldering tools and avoid thermal overload (max 300°C reflow) |
| Current Limit | Max continuous collector current: 200mA (peak 500mA) |
| Voltage Limit | Absolute maximum VCEO: 40V, VEB: 5V |
| Thermal Management | Thermal resistance: 200°C/W (mounting recommended) |
| Storage | Store in anti-static packaging below 10% RH |
| Risk Warnings |
|
Alternative Model Params
- VCEO (40V±2%)
- Pd (330mW±10%)
- Ic (200mA max)
- Operating temperature (-55°C to +150°C)
Design Recommendations
| Layout | Use short traces for base drive to minimize parasitic capacitance |
| Thermal | Add thermal vias for high-power applications |
| Compatibility | Pair with 0.1µF decoupling capacitors in high-frequency circuits |
| Testing | Verify hFE variation (100±20%) at 10mA base current |
Market Positioning
| Strengths |
|
| Weaknesses |
|
Datasheet
Assist inquiry
Distributors
Shenzhen Zhongxing Tai Electronic Co., Ltd.
Shenzhen Anxinmei Electronics Co., Ltd.
Shenzhen Futian District Bin Fengsheng Electronic Business Department
Shenzhen Beihuada Electronics Co., Ltd.
Baoma Microelectronics (Shenzhen) Co., Ltd.
Shenzhen BF Electronics Co., Ltd.
Shenzhen Mingcai Electronic Co., Ltd.
Shenzhen Chengxin Chip Technology Co., Ltd.
Shenzhen Chaolongye Electronic Technology Co., Ltd.
Shenzhen Baixin Microelectronics Co., Ltd.
Shenzhen Dadi Huayu Electronics Co., Ltd.
Shenzhen Decheng Xingye Technology Co., Ltd.
Shenzhen DeYang Electromechanical Co., Ltd.
Shenzhen Kaixin Yue Electronics Co., Ltd.
Shenzhen Yaoxin Technology Co., Ltd.
Shenzhen Xinyuhang Electronic Co., Ltd.
Shenzhen Qili Technology Co., Ltd.
Shenzhen Xinyi Electronics Co., Ltd.
Shenzhen Century Jinfeng Technology Co., Ltd.
Shenzhen Jihuisheng Technology Co., Ltd.
Shenzhen Hui Shengxin Electronic Technology Co., Ltd.
Shenzhen Xinteng Hongxin Electronic Technology Co., Ltd.
Shenzhen Bainei Information Technology Co., Ltd.
Shenzhen Pengxin Microelectronics Technology Co., Ltd.
Shenzhen Junbang Electronics Co., Ltd.
Shenzhen Yuanzhuang Weirun Technology Co., Ltd.
Shenzhen Mingxin Electronic Technology Co., Ltd.
Shenzhen Futian District Jintaielectronics Technology Trade
Shenzhen Junengda Electronics Co., Ltd.
Shenzhen Ju Rong Electronics Co., Ltd.