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000A2

Manufacturer

PANJIT

Model

000A2

Category

semiconductor
transistors

The MMBT5551-AU_R1-000A2 is a compact NPN BJT optimized for low-power switching and amplification in 2V-5.5V systems. Its 160V VCEO and 600mA Ic rating support motor control and LED applications, while the 300MHz fT enables RF front-end circuits. Thermal management requires careful heat dissipation above 250mW, and soldering must avoid thermal overstress. The SOT-23 package provides space savings but limits current handling compared to larger packages. This component is ideal for cost-sensitive, high-density designs requiring stable DC gain and fast switching.

Reference Pricing

10+ :$0.0392
100+ :$0.0308
300+ :$0.028

Reference Stock

Available:Unknown

Specifications

Beta (β)250
Cut-off Frequency (fT)300MHz
Input ImpedanceNot provided
Maximum Collector Current (Ic)600mA
Maximum Collector Power Dissipation (Pc)250mW
Maximum Collector Voltage (Vce)160V
Operating Temperature Range-55 to +150°C
Output ImpedanceNot provided
Package MaterialNot provided
Package TypeSOT-23
Power Dissipation250mW
Rated VoltageNot provided

Function And Role

Core Function

NPN Bipolar Junction Transistor (BJT) for low-power switching and amplification

Key Characteristics

  • 160V Collector-Emitter Voltage (VCEO)
  • 250mW Power Dissipation (Pd)
  • 600mA Collector Current (Ic)
  • 80 DC Current Gain (hFE) @10mA, 5V
  • 300MHz Transition Frequency (fT)

Application Domains

Basic Scenarios

  • Low-power signal switching in digital circuits
  • Basic amplification in analog circuits
  • Control of inductive loads (e.g., relays, motors)

Extended Scenarios

  • LED driver circuits
  • RF low-noise amplification
  • Battery management systems
  • Precision sensor signal conditioning

Precautions

Soldering

Use 260-280°C soldering temperature and 3-5 seconds per pad to prevent thermal damage

Current Limit

Max collector current: 600mA (exceedance causes thermal runaway)

Voltage Limit

Max VCEO: 160V (reverse bias breakdown protection required)

Thermal Management

Thermal resistance: 300°C/W (requires heat dissipation >250mW at 150°C)

Storage

Store in anti-static bags below 30°C and 10% humidity

Risk Warnings
  • Static discharge damage risk
  • Overvoltage beyond 160V causes device failure
  • Excessive power dissipation (>250mW) leads to thermal destruction

Alternative Model Params

  • VCEO matching (150-170V range)
  • Ic rating (500-800mA compatible)
  • hFE (70-90 range for signal integrity)
  • Pd (200-300mW equivalent range)
  • fT (200-400MHz for high-frequency applications)

Design Recommendations

Layout

Keep trace lengths <5mm for high-frequency applications

Thermal

Use 0.5mm-thick copper pads for thermal coupling

Compatibility

Matches 2V-5.5V logic levels with 10mA base drive

Testing

Verify hFE stability with 100-hour burn-in testing

Market Positioning

Strengths
  • Smallest SOT-23 package (2.8mm x 1.6mm) for space-constrained designs
  • Cost-effective (unit price <$0.025 at 3000+ units)
  • ROHS-compliant with lead-free soldering
Weaknesses
  • Limited to <=600mA continuous current
  • Lower gain stability vs. medium-power BJTs
  • No built-in protection diodes

Datasheet

Assist inquiry