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0090-3111-185

Manufacturer

API

Model

0090-3111-185

Category

semiconductor
diodes

This 1206 package photodiode provides reliable performance in optical detection applications within 800-1700nm range, featuring 20V reverse voltage tolerance and 200pA dark current. Designed for precision sensing in communication systems and advanced sensor arrays, it requires careful thermal management and ESD protection during handling. Best suited for applications requiring stable performance under -40°C to +100°C conditions with minimal signal noise.

Reference Pricing

1+ :$5.3872
200+ :$1.8634
500+ :$1.834
1000+ :$1.736

Reference Stock

Available:Unknown

Specifications

Light Sensitivity40 A/W
Maximum Forward Current10mA
Maximum Power Dissipation0.8V * 10mA = 8mW
Operating Temperature Range-40 to +100°C
Package Type1206
Rated Current10mA
Rated Voltage20V
Reverse Leakage Current1nA
Spectral Response Range900 to 1700 nm

Function And Role

Core Function

Photodiode for detecting light in the 800nm-1700nm wavelength range with low dark current

Key Characteristics

  • 20V DC reverse voltage rating
  • 200pA dark current
  • Operating temperature range: -40°C to +100°C
  • 1206 package (0.5mm x 0.3mm)

Application Domains

Basic Scenarios

  • Optical communication systems
  • Infrared sensor arrays
  • Photometric measurement devices

Extended Scenarios

  • Medical imaging equipment
  • LiDAR systems
  • Automotive night vision systems

Precautions

Soldering

Use 300-350°C soldering iron with 0.5-1.0s contact time to prevent thermal overstress

Current Limit

Max continuous current: 1mA (exceeding causes irreversible damage)

Voltage Limit

Reverse voltage must not exceed 20V (transient spikes >30V may cause breakdown)

Thermal Management

Maintain junction temperature below 85°C during continuous operation

Storage

Store in <10% relative humidity, avoid temperatures below -40°C or above +125°C

Risk Warnings
  • Static discharge potential (ESD rating <2000V)
  • Sensitivity to mechanical stress (Fragile glass package)
  • UV exposure degradation risk

Alternative Model Params

  • Spectral range (800-1700nm)
  • Reverse voltage (20V min)
  • Dark current (<200pA)
  • Operating temperature (-40°C to +100°C)
  • Package size (1206)

Design Recommendations

Layout

Implement 0Ω current shunt for bias circuitry

Thermal

Use thermal vias in PCB layout for heat dissipation

Compatibility

Ensure bias circuit has <1kΩ output impedance

Testing

Perform dark current measurement at 25°C before final assembly

Market Positioning

Strengths
  • Narrow wavelength range (800-1700nm) optimization
  • High reverse voltage tolerance (20V)
  • Low dark current (200pA) for precision sensing
Weaknesses
  • Moderate cost vs. performance ratio
  • Limited current handling capability (1mA max)
  • Sensitivity to ESD events

Datasheet

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