Yu Hong Jin

Jiangxi Yuhongjin Material Technology Co., Ltd. specializes in the development, manufacturing, and application of GaN (Gallium Nitride) series materials, a third-generation compound semiconductor. For over two decades, the company has focused on the research and production of GaN epitaxy, electronic devices, optoelectronic devices, and device packaging, with a solid theoretical foundation and extensive practical experience. It has mastered the core technologies in the fields of GaN epitaxy, device preparation, and packaging, and the performance of its GaN epitaxy and devices has reached the world's advanced level. The company's main products include high-performance Schottky diode barriers (SBD), high-electron mobility transistors (HEMT), radio frequency/power amplifiers (RF PA), and deep-ultraviolet light-emitting diodes (UVC-LED). These products are widely used in new energy vehicles, data centers, supercomputing centers, 5G communications, and sterilization and disinfection fields. Jiangxi Yuhongjin Material Technology Co., Ltd. is committed to achieving 'Made in China' in the field of GaN electronic devices and high-end optoelectronic devices!